污水處理設備 污泥處理設備 水處理過濾器 軟化水設備/除鹽設備 純凈水設備 消毒設備|加藥設備 供水/儲水/集水/排水/輔助 水處理膜 過濾器濾芯 水處理濾料 水處理劑 水處理填料 其它水處理設備
上海巨納科技有限公司
上海巨納科技有限公司
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簡要描述：In the bulk form SnSe has band-gap at around 0.9 eV （indirect） and 1.25 direct gaps. It has layered structure （lamellar） with weak interlayer coupling, enabling to isolate down to monolayers.
In the bulk form SnSe has band-gap at around 0.9 eV (indirect) and 1.25 direct gaps. It has layered structure (lamellar) with weak interlayer coupling, enabling to isolate down to monolayers. Each monolayer is four atoms thick (Se-Sn-Sn-Se) that is roughly 0.9-1.0 nm. At high pressures it undergo semiconductor to superconductor transition. More recently, SnSe has been shown to display world record performance for thermoelectric material efficiency.
SnSe single crystal characteristics
In the bulk form SnSe has band-gap at around 0.9 eV (indirect) and 1.25 direct gaps. It has layered structure (lamellar) with weak interlayer coupling, enabling to isolate down to monolayers. Each monolayer is four atoms thick (Se-Sn-Sn-Se) that is roughly 0.9-1.0 nm. At high pressures it undergo semiconductor to superconductor transition. More recently, SnSe has been shown to display world record performance for thermoelectric material efficiency.
SnSe single crystal characteristics
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