當(dāng)前位置：上海巨納科技有限公司>>二維材料>>硫化物晶體>>TlGaS2

TlGaS2

返回列表頁

參考價

面議

具體成交價以合同協(xié)議為準(zhǔn)

產(chǎn)品型號

品牌

廠商性質(zhì)其他

所在地上海

在線詢價收藏產(chǎn)品查看聯(lián)系電話

聯(lián)系方式：袁文軍查看聯(lián)系方式

更新時間：2024-02-10 16:45:08瀏覽次數(shù)：65次

聯(lián)系我時，請告知來自環(huán)保在線

產(chǎn)品分類 品牌分類

  二維材料

二維材料粉末

二維材料溶液

碲化物晶體

硒化物晶體

硫化物晶體

絕緣體

鈣鈦礦

異質(zhì)結(jié)

MOFS材料

二維材料薄膜

黑磷

六方氮化硼

其他二維材料

全部產(chǎn)品列表

暫無信息

上海巨納科技有限公司

經(jīng)營模式：其他

商鋪產(chǎn)品：574條

所在地區(qū)：

聯(lián)系人：袁文軍

詢價 給他留言

產(chǎn)品簡介

簡要描述：The only commercially available TlGaS2 vdW crystals have been synthesized at our facilities through float zone technique.

詳細(xì)介紹

The only commercially available TlGaS2 vdW crystals have been synthesized at our facilities through float zone technique. TlGaS2 semiconductors belong to the thallium chalcogenides family with the chemical formula TlBX2 (where B=In or Ga, X=S, Se or Te). Members of this family have both layered (TlGaSe2, , TlInS2) and chain (TlInSe2, TlInTe2, TlGaTe2) structures. Stacking of the atoms in TlGaSe2, and TlInS2 layered crystals is arranged in the form of two twisted anionic layers with the weak bonded Tl(+1) cations located in the trigonal cavities between them. In particular, is a 2.45 eV direct gap semiconductor with strong optical and electronic anisotropy.

The only commercially available vdW crystals have been synthesized at our facilities through float zone technique. semiconductors belong to the thallium chalcogenides family with the chemical formula TlBX2 (where B=In or Ga, X=S, Se or Te). Members of this family have both layered (TlGaSe2, , TlInS2) and chain (TlInSe2, TlInTe2, TlGaTe2) structures. Stacking of the atoms in TlGaSe2, and TlInS2 layered crystals is arranged in the form of two twisted anionic layers with the weak bonded Tl(+1) cations located in the trigonal cavities between them. In particular, is a 2.45 eV direct gap semiconductor with strong optical and electronic anisotropy.