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深圳市泰德蘭電子有限公司
TheMEE3710TisaN-Channelenhancementmodepowerfieldeffecttransistors,usingForce-MOSpatentedExtendedTrenchGate(ETG)technology
The MEE3710T is a N-Channel enhancement mode power field effect transistors,using Force-MOS patented Extended Trench Gate (ETG)technology.This advanced technology is especially tailored to minimize on state resistance and gate charge, and enhance avalanche capability.These devices are particularly suited for medium voltage application such as charger, adapter,notebook computer power management and other lighting dimming powered circuits,and low in-line power loss that are needed in a very small outline surface mount package.
應用:
●電源管理
●同步整流
●負荷開關
● RDS(ON)≦23mΩ@VGS=10V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability
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