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深圳市泰德蘭電子有限公司
參 考 價(jià) | 面議 |
產(chǎn)品型號(hào)ME13N10A
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更新時(shí)間:2022-03-24 10:37:19瀏覽次數(shù):186次
聯(lián)系我時(shí),請(qǐng)告知來(lái)自 環(huán)保在線TheME13N10AistheN-Channellogicenhancementmodepowerfieldeffecttransistorsareproducedusinghighcelldensity,DMOStrenchtechnology
The ME13N10A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density,DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching,and low in-line power loss are needed in a very small outline surface mount package.
應(yīng)用:
●DC/DC轉(zhuǎn)換器
●負(fù)荷開(kāi)關(guān)
●LCD/LED顯示逆變器
● RDS(ON) ≦145mΩ@VGS=10V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability
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