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深圳市泰德蘭電子有限公司
TheME12N15istheN-Channellogicenhancementmodepowerfieldeffecttransistorsareproducedusinghighcelldensity,DMOStrenchtechnology
The ME12N15 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density,DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching,and low in-line power loss are needed in a very small outline surface mount package.
應用:
●電源管理
●DC/DC轉換器
●負荷開關
● RDS(ON)≦150mΩ@VGS=10V
● RDS(ON)≦250mΩ@VGS=10V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability
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