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深圳市泰德蘭電子有限公司
TheXP162isanP-channelPowerMOSFETwithlowon-stateresistanceandultrahigh-speedswitchingcharacteristics
The XP162 is an P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
封裝 (輸出形式) 訂貨單位 | 品名 | 額定值 | 電特性 | Vgs(OFF)(V) | Ciss(pF) | 驅動電壓(V) | ||||||||||
Vdss(V) | Vdss(V) | ld(A) | Rds(ON)(Ω) | |||||||||||||
Vgs=-2.5V | Vgs=-4.5V | Vgs=-5.5V | Vgs=-10V | |||||||||||||
TYP. | MAX. | TYP. | MAX. | TYP. | MAX. | TYP. | MAX. | MIN. | MAX. | |||||||
SOT-89(Sing le) 1000pcs/Reel | XP162A11C0PR | -30 | ±20 | -2.5 | - | - | 0.28 | 0.45 | 0.075 | 0.11 | 0.11 | 0.15 | -1 | -2.5 | 280 | -4.5 |
XP162A12A6PR | -20 | ±12 | -2.5 | 0.22 | 0.3 | 0.17 | 0.3 | 0.042 | 0.06 | - | - | -0.5 | -1.2 | 310 | -2.5 |
Low On-State Resistance : Rds(on) = 0.15Ω@ Vgs = -10V
: Rds(on) = 0.28Ω@ Vgs = -4.5V
Ultra High-Speed Switching
Driving Voltage : -4.5V
Gate Protect Diode Built-in
P-Channel Power MOSFET
DMOS Structure
Small Package : SOT-89
Environmentally Friendly : EU RoHS Compliant, Pb Free
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