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上海熙浩實業有限公司

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B-100A高強度紫外線燈

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產品型號B-100A

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更新時間:2021-08-25 18:41:58瀏覽次數:128次

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B-100A高強度紫外線燈提供100W 高強度長波(365nm)紫外線燈,燈可架在架上旋轉360度,照明面積直徑可達127mm(at 457mm)
B-100A高強度紫外線燈
1. B-100AP 提供100W 高強度長波(365nm)紫外線燈,具隔熱不燙手保護罩(Cool-Touch),燈可架在架上旋轉360度,照明面積直徑可達127mm(at 457mm)
2. B-100AP/R 與B-100AP同,但多了20呎之延長線及兩側之固定架
3. B-100A 與B-100AP同,但不具隔熱不燙手保護罩(Cool-Touch)
4. B-100A/R 與B-100A同,但多了20呎之延長線及兩側之固定架

B-100AP and B-100AP/R
B-100AP models feature 100 watt longwave UV, Cool-Touch housing and ballast base. At 18 in. (457 mm), the lamp produces a highly intense center of UV irradiance about 5 in. (127 mm) in diameter. Lamp head can rotate 360 degrees when attached to the base for hands-free operation or lamp can be removed from the base. 8 ft primary and secondary cords. For added mobility, select the B-100AP/R which includes 20 ft (6.1m) primary and secondary cords. Uses for these lamps include non-destructive testing and fluorescence inspection.

B-100A and A-100AR
The longwave B-100A is manufactured with a scratch-resistant aluminum housing which connects to ballast base with an 8 foot cord; 8 foot secondary cord is included. The 100 watt longwave UV bulb is excellent for inspection applications. For increased mobility, select the B-100AR which includes 20 ft (6.1m) primary and secondary cords. Uses for these lamps include non-destructive testing and fluorescence inspection.

B-100SP
This 140 watt longwave, self-ballasted lamp is a highly portable, high intensity lamp for automotive leak detection applications. The ballast is built directly into the bulb. The B-100SP features the Cool-Touch housing and an 8 ft. (2.44m) cord.

B-100Y and B-100YP
These models feature a yellow filter which blocks wavelengths shorter than 500nm and produces three strong mercury lines at 543, 574 and 576nm. The high contrast light is produced for fine surface particle detection. Particles down to 10 microns are routinely visible with this lamp. B-100Y is built with the aluminum housing; B-100YP with a plastic housing. These lamps are excellent for semiconductor wafer inspection as most photoresist absorption occurs below 450nm.


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