The ME2N7002F1KW is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
應用:
●筆記本中的電源管理
●DC/DC轉換器
●負荷開關
●液晶顯示逆變器
● RDS(ON)≦8Ω@VGS=4V
● RDS(ON)≦13Ω@VGS=2.5V
● ESD Protection HBM 1KV
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability