The ME50P06P is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits,and low in-line power loss are needed in a very small outline surface mount package.
應(yīng)用:
●筆記本中的電源管理
●DC/DC轉(zhuǎn)換器
●負(fù)荷開(kāi)關(guān)
●液晶顯示逆變器
● RDS(ON)≦17mΩ@VGS=-10V
● RDS(ON)≦20mΩ@VGS=-4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability