The ME50N06T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density,DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.
應用:
●電源管理
●DC/DC轉換器
●負荷開關
● RDS(ON)≦22mΩ@VGS=10V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability