The ME25N10T is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density,DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits,and low in-line power loss are needed in a very small outline surface mount package.
應用:
●筆記本中的電源管理
●DC/DC轉換器
●負荷開關
●液晶顯示逆變器
● RDS(ON)≦85mΩ@VGS=10V
● RDS(ON)≦105mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability