The ME4416 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density,DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
ME4416是N通道邏輯增強型功率場效應晶體管，采用高單元密度DMOS溝道技術(shù)制造。
這種高密度工藝特別適合于最小化導通電阻。
這些設(shè)備特別適用于低電壓應用，如蜂窩電話和筆記本電腦電源管理和其他電池供電電路，在非常小的外形表面貼裝封裝中，需要高側(cè)開關(guān)和低功耗。
● RDS(ON)≦22mΩ@VGS=10V
● RDS(ON)≦35mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability
應用：
●筆記本中的電源管理
●便攜式設(shè)備
●電池供電系統(tǒng)
●DC/DC轉(zhuǎn)換器
●負荷開關(guān)
●差示掃描量熱儀
●液晶顯示逆變器
